FCU900N60Z

onsemi

FCU900N60Z

Datasheet

Analog & Power

MOSFET N-CH 600V 4.5A IPAK

DiscontinuedTO-251-3 Stub Leads, IPakAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs900mOhm @ 2.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusLast Time Buy
SeriesSuperFET® II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Max Power Dissipation52W (Tc)

Mechanical

PackageTube
Package / CaseTO-251-3 Stub Leads, IPak
Supplier Device PackageI-PAK

Environmental

Operating Temperature-55°C ~ 150°C (TJ)