FCPF220N80

onsemi

FCPF220N80

Analog & Power

MOSFET N-CH 800V 23A TO220F

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs220mOhm @ 11.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4560 pF @ 100 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusActive
SeriesSuperFET® II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 2.3mA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Max Power Dissipation44W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F-3

Environmental

Operating Temperature-55°C~150°C(TJ)