FCPF16N60

onsemi

FCPF16N60

Datasheet

Analog & Power

MOSFET N-CH 600V 16A TO220F

DiscontinuedTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs260mOhm @ 8A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesSuperFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Max Power Dissipation37.9W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220F-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)