FCMT199N60

onsemi

FCMT199N60

Datasheet

Analog & Power

MOSFET N-CH 600V 20.2A POWER88

Discontinued4-PowerTSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs199mOhm @ 10A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2950 pF @ 100 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesSuperFET® II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3.5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C20.2A (Tc)
Max Power Dissipation208W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case4-PowerTSFN
Supplier Device PackagePower88

Environmental

Operating Temperature-55°C ~ 150°C (TJ)