FCMT080N65S3

onsemi

FCMT080N65S3

Analog & Power

MOSFET N-CH 650V 38A 4TDFN

Discontinued4-PowerTSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 19A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2765 pF @ 400 V
Manufactureronsemi
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusNot For New Designs
SeriesSuperFET® III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 880µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Max Power Dissipation260W (Tc)

Mechanical

Package / Case4-PowerTSFN
Supplier Device Package4-TDFN (8x8)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)