FCH25N60N

onsemi

FCH25N60N

Datasheet

Analog & Power

MOSFET N-CH 600V 25A TO247-3

ObsoleteTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs126mOhm @ 12.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3352 pF @ 100 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
SeriesSupreMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Max Power Dissipation216W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)