FCH077N65F-F155

onsemi

FCH077N65F-F155

Datasheet

Analog & Power

MOSFET N-CH 650V 54A TO247

DiscontinuedTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs77mOhm @ 27A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7109 pF @ 100 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusNot For New Designs
SeriesFRFET®, SuperFET® II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 5.4mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Max Power Dissipation481W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C ~ 150°C (TJ)