FCH077N65F-F085

onsemi

FCH077N65F-F085

Analog & Power

POWER FIELD-EFFECT TRANSISTOR, N

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs77mOhm @ 27A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7162 pF @ 25 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, SuperFET® II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C54A (Tc)
Max Power Dissipation481W (Tc)

Mechanical

PackageBulk
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C~150°C(TJ)