FCH041N65EFLN4

onsemi

FCH041N65EFLN4

Datasheet

Analog & Power

MOSFET N-CH 650V 76A TO247-4

ActiveTO-247-4Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs41mOhm @ 38A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs298 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12560 pF @ 100 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusActive
SeriesFRFET®, SuperFET® II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 7.6mA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Max Power Dissipation595W (Tc)

Mechanical

PackageTube
Package / CaseTO-247-4
Supplier Device PackageTO-247-4

Environmental

Operating Temperature-55°C ~ 150°C (TJ)