EFC6605R-V-TR

onsemi

EFC6605R-V-TR

Analog & Power

MOSFET 2N-CH 20V 10A 6EFCP

Active6-SMD, No LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs13.3mOhm @ 3A, 4.5V
Base Product NumberEFC6605
Configuration2 N-Channel
FET FeatureLogic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs19.8nC @ 4.5V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.3V @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Power - Max1.6W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-SMD, No Lead
Supplier Device Package6-EFCP (1.9x1.46)

Environmental

Operating Temperature150°C