EFC3J018NUZTDG

onsemi

EFC3J018NUZTDG

Datasheet

Analog & Power

MOSFET 2N-CH 20V 23A 6WLCSP

Active6-XFBGA, WLCSPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.7mOhm @ 5A, 4.5V
Base Product NumberEFC3J018
Configuration2 N-Channel (Dual) Common Drain
FET FeatureLogic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs75nC @ 4.5V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.3V @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Power - Max2.5W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-XFBGA, WLCSP
Supplier Device Package6-WLCSP (1.77x3.05)

Environmental

Operating Temperature150°C (TJ)