ECH8657-TL-H

onsemi

ECH8657-TL-H

Datasheet

Analog & Power

MOSFET 2N-CH 35V 4.5A 8ECH

Active8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs59mOhm @ 2A, 10V
Base Product NumberECH8657
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 20V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage35V
Current - Continuous Drain (Id) @ 25°C4.5A
Power - Max1.5W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SMD, Flat Lead
Supplier Device Package8-ECH

Environmental

Operating Temperature150°C (TJ)