ECH8419-TL-H

onsemi

ECH8419-TL-H

Datasheet

Analog & Power

MOSFET N-CH 35V 9A 8ECH

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs17mOhm @ 5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.6V @ 1mA

Electrical

Drain-to-Source Voltage35 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Max Power Dissipation1.5W (Ta)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SMD, Flat Lead
Supplier Device Package8-ECH

Environmental

Operating Temperature150°C (TJ)