ECH8411-TL-E

onsemi

ECH8411-TL-E

Analog & Power

MOSFET N-CH 20V 9A 8ECH

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs16mOhm @ 4A, 4V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds1740 pF @ 10 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage20 V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Max Power Dissipation1.4W (Ta)

Mechanical

PackageBulk
Package / Case8-SMD, Flat Lead
Supplier Device Package8-ECH

Environmental

Operating Temperature150°C(TJ)