ECH8308-TL-H

onsemi

ECH8308-TL-H

Datasheet

Analog & Power

MOSFET P-CH 12V 10A 8ECH

Active8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs12.5mOhm @ 5A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 6 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V

Electrical

Drain-to-Source Voltage12 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Max Power Dissipation1.6W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SMD, Flat Lead
Supplier Device Package8-ECH

Environmental

Operating Temperature150°C (TJ)