ECH8305-TL-E

onsemi

ECH8305-TL-E

Analog & Power

MOSFET P-CH 60V 4A 8ECH

Obsolete8-SMD, Flat LeadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs85mOhm @ 2A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Max Power Dissipation1.6W (Ta)

Mechanical

PackageBulk
Package / Case8-SMD, Flat Lead
Supplier Device Package8-ECH

Environmental

Operating Temperature150°C (TJ)