Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 220mOhm @ 1A, 4V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 20 V |
| Manufacturer | onsemi |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Max Power Dissipation | 1.6W (Ta) |
| Package | Bulk |
|---|---|
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-CPH |
| Operating Temperature | 150°C (TJ) |
|---|