Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 34mOhm @ 3A, 4.5V |
|---|---|
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 6 V |
| Manufacturer | onsemi |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±8V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Drain-to-Source Voltage | 12 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Max Power Dissipation | 1.6W (Ta) |
| Package | Bulk |
|---|---|
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-CPH |
| Operating Temperature | 150°C |
|---|