BSS123-G

onsemi

BSS123-G

Analog & Power

FET 100V 6.0 MOHM SOT23

ActiveTO-236-3, SC-59, SOT-23-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6Ohm @ 170mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds73 pF @ 25 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 34µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C170mA (Ta)
Max Power Dissipation360mW (Ta)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

Environmental

Operating Temperature-55°C~150°C(TJ)