BMS4007

onsemi

BMS4007

Datasheet

Analog & Power

MOSFET N-CH 75V 60A TO220ML

ObsoleteTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7.8mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9700 pF @ 20 V
Manufactureronsemi
Mounting TypeThrough Hole
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage75 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Max Power Dissipation2W (Ta), 30W (Tc)

Mechanical

PackageBag
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220ML

Environmental

Operating Temperature-55°C ~ 150°C (TJ)