ATP602-TL-H

onsemi

ATP602-TL-H

Datasheet

Analog & Power

MOSFET N-CH 600V 5A ATPAK

ObsoleteATPAK (2 Leads+Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.7Ohm @ 2.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 30 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Max Power Dissipation70W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseATPAK (2 Leads+Tab)
Supplier Device PackageATPAK

Environmental

Operating Temperature150°C (TJ)