ATP216-TL-H

onsemi

ATP216-TL-H

Datasheet

Analog & Power

MOSFET N-CH 50V 35A ATPAK

ObsoleteATPAK (2 Leads+Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs23mOhm @ 18A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V

Electrical

Drain-to-Source Voltage50 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C35A (Ta)
Max Power Dissipation40W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseATPAK (2 Leads+Tab)
Supplier Device PackageATPAK

Environmental

Operating Temperature150°C (TJ)