Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 30 V |
| Manufacturer | onsemi |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage | 500 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Max Power Dissipation | 2W (Ta), 33W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FI(LS) |
| Operating Temperature | 150°C (TJ) |
|---|