2SJ661-DL-1E

onsemi

2SJ661-DL-1E

Datasheet

Analog & Power

MOSFET P-CH 60V 38A TO263-2

ObsoleteTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs39mOhm @ 19A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4360 pF @ 20 V
Manufactureronsemi
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C38A (Ta)
Max Power Dissipation1.65W (Ta), 65W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263-2

Environmental

Operating Temperature150°C (TJ)