General
| Manufacturer | onsemi |
|---|---|
| Mounting Type | Through Hole |
| Packaging | Bulk |
| Part Status | Active |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2mA, 40mA |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 20mA, 5V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
Mechanical
| Package / Case | 3-SSIP |
|---|---|
| Supplier Device Package | 3-SPA |