SI9936DY,518

NXP USA Inc

SI9936DY,518

Analog & Power

MOSFET 2N-CH 30V 5A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs50mOhm @ 5A, 10V
Base Product NumberSI9936
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C5A
Power - Max900mW

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

Environmental

Operating Temperature150°C (TJ)