Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 9mOhm @ 12.5A, 10V |
|---|---|
| Base Product Number | SI4 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tj) |
| Max Power Dissipation | 2.5W (Ta) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|