PMWD19UN,518

NXP USA Inc

PMWD19UN,518

Analog & Power

MOSFET 2N-CH 30V 5.6A 8TSSOP

Obsolete8-TSSOP (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs23mOhm @ 3.5A, 4.5V
Base Product NumberPMWD19
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds1478pF @ 10V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id700mV @ 1mA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C5.6A
Power - Max2.3W

Mechanical

PackageTape & Reel (TR)
Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)