PMWD16UN,518

NXP USA Inc

PMWD16UN,518

Analog & Power

MOSFET 2N-CH 20V 9.9A 8TSSOP

Obsolete8-TSSOP (0.173", 4.40mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs19mOhm @ 3.5A, 4.5V
Base Product NumberPMWD16
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs23.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1366pF @ 16V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
PackagingTape & Reel (TR) Cut Tape (CT)
Part StatusObsolete
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id700mV @ 1mA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C9.9A
Power - Max3.1W

Mechanical

Package / Case8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package8-TSSOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)