PMR670UPE,115

NXP USA Inc

PMR670UPE,115

Analog & Power

MOSFET P-CH 20V 480MA SC75

ObsoleteSC-75, SOT-416Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs850mOhm @ 400mA, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs1.14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds87 pF @ 10 V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1.3V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C480mA (Ta)
Max Power Dissipation250mW (Ta), 770mW (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSC-75, SOT-416
Supplier Device PackageSC-75

Environmental

Operating Temperature-55°C ~ 150°C (TJ)