PMN25EN,115

NXP USA Inc

PMN25EN,115

Analog & Power

MOSFET N-CH 30V 6.2A 6TSOP

ObsoleteSC-74, SOT-457Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs23mOhm @ 6.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds492 pF @ 15 V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C6.2A (Ta)
Max Power Dissipation540mW (Ta), 6.25W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseSC-74, SOT-457
Supplier Device PackageSC-74

Environmental

Operating Temperature-55°C ~ 150°C (TJ)