PMGD130UN,115

NXP USA Inc

PMGD130UN,115

Analog & Power

MOSFET 2N-CH 20V 1.2A 6TSSOP

Obsolete6-TSSOP, SC-88, SOT-363Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs145mOhm @ 1.2A, 4.5V
Base Product NumberPMGD1
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs1.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds83pF @ 10V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C1.2A
Power - Max390mW

Mechanical

PackageTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device Package6-TSSOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)