Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 55mOhm @ 3A, 4.5V |
|---|---|
| Base Product Number | PMG45 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 10 V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Max Power Dissipation | 375mW (Ta), 4.35W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | 6-TSSOP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|