PMF63UN,115

NXP USA Inc

PMF63UN,115

Analog & Power

MOSFET N-CH 20V 1.8A SOT323-3

ObsoleteSC-70, SOT-323Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs74mOhm @ 1.8A, 4.5V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds185 pF @ 10 V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Max Power Dissipation275mW (Ta), 1.785W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70

Environmental

Operating Temperature-55°C ~ 150°C (TJ)