PMDPB38UNE,115

NXP USA Inc

PMDPB38UNE,115

Analog & Power

MOSFET 2N-CH 20V 4A 6HUSON

Obsolete6-UDFN Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs46mOhm @ 3A, 4.5V
Base Product NumberPMDPB
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds268pF @ 10V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20V
Current - Continuous Drain (Id) @ 25°C4A
Power - Max510mW

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-UDFN Exposed Pad
Supplier Device Package6-HUSON (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)