Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 25 V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-to-Source Voltage | 200 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 14.4A (Tc) |
| Max Power Dissipation | 62.5W (Tc) |
| Package / Case | 8-VDFN Exposed Pad |
|---|---|
| Supplier Device Package | 8-HVSON (5x6) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|