Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 16mOhm @ 25A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 20 V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Drain-to-Source Voltage | 20 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 5V |
| Current - Continuous Drain (Id) @ 25°C | 44.7A (Tc) |
| Max Power Dissipation | 57.6W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D2PAK |
| Operating Temperature | -55°C~175°C(TJ) |
|---|