Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 12 V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Drain-to-Source Voltage | 25 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 81.7A (Tc) |
| Max Power Dissipation | 62.5W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | SC-100, SOT-669 |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|