PH4830L,115

NXP USA Inc

PH4830L,115

Analog & Power

MOSFET N-CH 30V 84A LFPAK56

ObsoleteSC-100, SOT-669Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4.8mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2786 pF @ 12 V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
PackagingTape & Reel (TR)
Part StatusObsolete
SeriesTrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.15V @ 1mA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C84A (Tc)
Max Power Dissipation62.5W (Tc)

Mechanical

Package / CaseSC-100, SOT-669
Supplier Device PackageLFPAK56, Power-SO8

Environmental

Operating Temperature-55°C ~ 150°C (TJ)