General
| Base Product Number | PBSS9 |
|---|---|
| Manufacturer | NXP USA Inc. |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 100mA, 1A |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 5V |
| Power - Max | 830 mW |
| Frequency - Transition | 100MHz |
Mechanical
| Package | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|