General
| Resistance - RDS(On) | 18 Ohms |
|---|---|
| Base Product Number | J110 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 0V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
Technical Specifications
Structured electrical, mechanical and environmental parameters from imported product attributes.
Electrical
| Drain-to-Source Voltage | 25 V |
|---|---|
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10 mA @ 5 V |
| Power - Max | 400 mW |
Mechanical
| Package | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
Environmental
| Operating Temperature | 150°C (TJ) |
|---|