BUK953R5-60E,127

NXP USA Inc

BUK953R5-60E,127

Analog & Power

MOSFET N-CH 60V 120A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs3.4mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds13490 pF @ 25 V
ManufacturerNXP USA Inc.
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, TrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2.1V @ 1mA

Electrical

Drain-to-Source Voltage60 V
Current - Continuous Drain (Id) @ 25°C120A (Ta)
Max Power Dissipation293W (Ta)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C~175°C(TJ)