BUK7E13-60E,127

Name: BUK7E13-60E,127
Brand: NXP USA Inc

Analog & Power

MOSFET N-CH 60V 58A I2PAK

ActiveTO-262-3 Long Leads, I²Pak, TO-262AAAnalog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	13mOhm @ 15A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	22.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1730 pF @ 25 V
Manufacturer	NXP USA Inc.
Mounting Type	Through Hole
Product Status	Active
Series	Automotive, AEC-Q101, TrenchMOS™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 1mA

Drain-to-Source Voltage	60 V
Current - Continuous Drain (Id) @ 25°C	58A (Ta)
Max Power Dissipation	96W (Ta)

Operating Temperature	-55°C~175°C(TJ)