BUK7C06-40AITE,118

NXP USA Inc

BUK7C06-40AITE,118

Analog & Power

MOSFET N-CH 40V 75A D2PAK

ActiveTO-263-7, D²Pak (6 Leads + Tab), TO-263CBAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6mOhm @ 50A, 10V
FET FeatureCurrent Sensing
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 25 V
ManufacturerNXP USA Inc.
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, TrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Max Power Dissipation272W (Tc)

Mechanical

PackageBulk
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Supplier Device PackageD2PAK

Environmental

Operating Temperature-55°C~175°C(TJ)