BUK754R0-40C,127

NXP USA Inc

BUK754R0-40C,127

Analog & Power

MOSFET N-CH 40V 100A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5708 pF @ 25 V
ManufacturerNXP USA Inc.
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, TrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage40 V
Current - Continuous Drain (Id) @ 25°C100A (Ta)
Max Power Dissipation203W (Ta)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C~175°C(TJ)