Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 24mOhm @ 25A, 10V |
|---|---|
| Base Product Number | BUK75 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Obsolete |
| Series | TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Drain-to-Source Voltage | 55 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Max Power Dissipation | 103W (Tc) |
| Package / Case | TO-220-3 |
|---|---|
| Supplier Device Package | TO-220AB |
| Operating Temperature | -55°C ~ 175°C (TJ) |
|---|