BUK751R8-40E127

NXP USA Inc

BUK751R8-40E127

Analog & Power

N-CHANNEL POWER MOSFET

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.8mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11340 pF @ 25 V
ManufacturerNXP USA Inc.
Mounting TypeThrough Hole
Product StatusActive
SeriesAutomotive, AEC-Q101, TrenchMOS™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 1mA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Max Power Dissipation349W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Environmental

Operating Temperature-55°C~175°C(TJ)