Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 25A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 229 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14964 pF @ 25 V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Through Hole |
| Product Status | Active |
| Series | Automotive, AEC-Q101, TrenchMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Max Power Dissipation | 306W (Tc) |
| Package | Bulk |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | I2PAK |
| Operating Temperature | -55°C~175°C(TJ) |
|---|