BUK6217-55C,118

Name: BUK6217-55C,118
Brand: NXP USA Inc

Analog & Power

MOSFET N-CH 55V 44A DPAK

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Structured electrical, mechanical and environmental parameters from imported product attributes.

Rds On (Max) @ Id, Vgs	19mOhm @ 12A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	33.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1950 pF @ 25 V
Manufacturer	NXP USA Inc.
Mounting Type	Surface Mount
Product Status	Active
Series	Automotive, AEC-Q101, TrenchMOS™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±16V
Vgs(th) (Max) @ Id	2.8V @ 1mA

Drain-to-Source Voltage	55 V
Current - Continuous Drain (Id) @ 25°C	44A (Ta)
Max Power Dissipation	80W (Ta)

Operating Temperature	-55°C~175°C(TJ)