Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 6Ohm @ 250mA, 10V |
|---|---|
| Base Product Number | BSN3 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 25 V |
| Manufacturer | NXP USA Inc. |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Drain-to-Source Voltage | 300 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 2.4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Max Power Dissipation | 1W (Ta) |
| Package | Tape & Box (TB) |
|---|---|
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Operating Temperature | -55°C~150°C(TJ) |
|---|